Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?
Author(s) -
Jing Li,
Narjes Jomaa,
Yann-Michel Niquet,
M. Saïd,
Christophe Delerue
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4903475
Subject(s) - nanowire , nanoelectronics , electron mobility , materials science , core (optical fiber) , condensed matter physics , shell (structure) , transistor , quantum dot , germanium , field effect transistor , phonon , nanotechnology , optoelectronics , silicon , physics , quantum mechanics , voltage , composite material
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