English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We show that oscillation of low temperature electron mobility μ can be obtained by applying an electric field F along the growth direction of the asymmetrically barrier delta doped AlxGa1-xAs parabolic double quantum well structure. The drastic changes in the subband Fermi energies and distributions of subband wave functions as a function of F yield nonmonotonic intra- and intersubband scattering rate matrix elements mediated by intersubband effects. The oscillatory enhancement of μ, which is attributed to the subband mobilities governed by the ionized impurity scattering, magnifies with increase in well width and decrease in height of the parabolic structure potential. The results can be utilized for nanoscale low temperature device applications

Oscillation of electron mobility in parabolic double quantum well structure due to applied electric field