Open AccessFabrication of 5-20 nm thick β-W films
Author(s) -
Avyaya J. Narasimham,
Manasa Medikonda,
Akitomo Matsubayashi,
Prasanna Khare,
Hyuncher Chong,
R. J. Matyi,
Alain C. Diebold,
V. P. LaBella
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4903165
Subject(s) - x ray photoelectron spectroscopy , tungsten , sputtering , materials science , substrate (aquarium) , fabrication , layer (electronics) , deposition (geology) , diffraction , sputter deposition , optoelectronics , electrical resistivity and conductivity , thin film , analytical chemistry (journal) , nanotechnology , optics , chemical engineering , metallurgy , chemistry , electrical engineering , alternative medicine , oceanography , pathology , engineering , biology , paleontology , chromatography , medicine , physics , sediment , geology
A technique to fabricate 5 to 20 nm thick sputter deposited β W films on SiO2 and Si substrates is presented. This is achieved by growing tungsten on a 5 nm SiO2 layer or in an oxygen controlled environment by flowing 2 sccm of O2 during deposition. Resistivity, X-ray photoelectron spectroscopy, X-ray diffraction and reflectivity studies were performed to determine the phase and thickness of tungsten films. These results demonstrate a technique to grow this film on bare Si or a SiO2 substrate, which can enable growth on the bottom of a write unit in a non-volatile spin logic device
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom