A high density two-dimensional electron gas in an oxide heterostructure on Si (001) | Zendy

Eric N. Jin | Zendy; Lior Kornblum | Zendy; Divine P. Kumah | Zendy; Ke Zou | Zendy; C. Broadbridge | Zendy; Joseph H. Ngai | Zendy; Charles Ahn | Zendy; F. J. Walker | Zendy

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A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

Author(s) -

Eric N. Jin,

Lior Kornblum,

Divine P. Kumah,

Ke Zou,

C. Broadbridge,

Joseph H. Ngai,

Charles Ahn,

F. J. Walker

Publication year - 2014

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4902433

Subject(s) - heterojunction , materials science , oxide , microelectronics , epitaxy , silicon , electron , fermi gas , condensed matter physics , optoelectronics , nanotechnology , layer (electronics) , metallurgy , physics , quantum mechanics

We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm−2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies

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