Erratum: “Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers” [J. Appl. Phys. 114, 073101 (2013)] | Zendy

M. Kořínek | Zendy; Manuel Schnabel | Zendy; Mariaconcetta Canino | Zendy; Martin Kozák | Zendy; F. Trojánek | Zendy; Jan Salava | Zendy; Philipp Löper | Zendy; S. Janz | Zendy; C. Summonte | Zendy; P. Malý | Zendy

Open Access

Erratum: “Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers” [J. Appl. Phys. 114, 073101 (2013)]

Author(s) -

M. Kořínek,

Manuel Schnabel,

Mariaconcetta Canino,

Martin Kozák,

F. Trojánek,

Jan Salava,

Philipp Löper,

S. Janz,

C. Summonte,

P. Malý

Publication year - 2014

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4902006

Subject(s) - passivation , nanocrystal , boron , doping , materials science , recombination , hydrogen , silicon , charge carrier , charge (physics) , carrier lifetime , wide bandgap semiconductor , optoelectronics , atomic physics , nanotechnology , chemistry , physics , quantum mechanics , biochemistry , organic chemistry , layer (electronics) , gene

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research