Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties | Zendy

Helen Hejin Park | Zendy; Ashwin Jayaraman | Zendy; Rachel Heasley | Zendy; Chuanxi Yang | Zendy; Lauren Hartle | Zendy; Ravin Mankad | Zendy; Richard Haight | Zendy; David B. Mitzi | Zendy; Oki Gunawan | Zendy; Roy G. Gordon | Zendy

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Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Author(s) -

Helen Hejin Park,

Ashwin Jayaraman,

Rachel Heasley,

Chuanxi Yang,

Lauren Hartle,

Ravin Mankad,

Richard Haight,

David B. Mitzi,

Oki Gunawan,

Roy G. Gordon

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4901899

Subject(s) - layer (electronics) , atomic layer deposition , zinc , materials science , aluminium , thin film , deposition (geology) , analytical chemistry (journal) , sulfur , inorganic chemistry , chemistry , metallurgy , nanotechnology , environmental chemistry , paleontology , sediment , biology

Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to 1020 cm−3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 1019 to 1014 cm−3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.

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