Raman spectroscopy of GaP/GaNP core/shell nanowires | Zendy

Alexandr Dobrovolsky | Zendy; S. Sukritta | Zendy; Y. J. Kuang | Zendy; C. W. Tu | Zendy; Weimin Chen | Zendy; I. A. Buyanova | Zendy

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Raman spectroscopy of GaP/GaNP core/shell nanowires

Author(s) -

Alexandr Dobrovolsky,

S. Sukritta,

Y. J. Kuang,

C. W. Tu,

Weimin Chen,

I. A. Buyanova

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4901446

Subject(s) - raman spectroscopy , phonon , nanowire , materials science , raman scattering , molecular beam epitaxy , spectroscopy , wide bandgap semiconductor , scattering , optoelectronics , molecular physics , condensed matter physics , epitaxy , optics , nanotechnology , chemistry , physics , quantum mechanics , layer (electronics)

Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm(-1) that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

Funding Agencies|Vetenskapsradet (Swedish Research Council) [621-2010-3815]; U.S. National Science Foundation [DMR-0907652, DMR-1106369]; Royal Government of Thailand Scholarship

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