Low temperature photoresponse of monolayer tungsten disulphide | Zendy

Bingchen Cao | Zendy; Xiaonan Shen | Zendy; Jingzhi Shang | Zendy; Chunxiao Cong | Zendy; Weihuang Yang | Zendy; Mustafa Eginligil | Zendy; Ting Yu | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Low temperature photoresponse of monolayer tungsten disulphide

Author(s) -

Bingchen Cao,

Xiaonan Shen,

Jingzhi Shang,

Chunxiao Cong,

Weihuang Yang,

Mustafa Eginligil,

Ting Yu

Publication year - 2014

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4900816

Subject(s) - monolayer , materials science , chemical vapor deposition , tungsten disulfide , tungsten , tungsten diselenide , exfoliation joint , optoelectronics , transition metal , trapping , deposition (geology) , photochemistry , nanotechnology , graphene , composite material , metallurgy , chemistry , catalysis , organic chemistry , ecology , paleontology , sediment , biology

High photoresponse can be achieved in monolayers of transition metal dichalcogenides. However, the response times are inconveniently limited by defects. Here, we report low temperature photoresponse of monolayer tungsten disulphide prepared by exfoliation and chemical vapour deposition (CVD) method. The exfoliated device exhibits n-type behaviour; while the CVD device exhibits intrinsic behaviour. In off state, the CVD device has four times larger ratio of photoresponse for laser on/off and photoresponse decay–rise times are 0.1 s (limited by our setup), while the exfoliated device has few seconds. These findings are discussed in terms of charge trapping and localization

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research