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Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films
Author(s) -
Rajesh K. Katiyar,
Yogesh Sharma,
Pankaj Misra,
Venkata Sreenivas Puli,
Satyaprakash Sahoo,
Ashok Kumar,
J. F. Scott,
Gerardo Morell,
Brad R. Weiner,
Ram S. Katiyar
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4900755
Subject(s) - poling , materials science , photocurrent , ferroelectricity , thin film , optoelectronics , crystallite , pulsed laser deposition , photovoltaic effect , polarization (electrochemistry) , open circuit voltage , electrode , doping , photovoltaic system , voltage , nanotechnology , chemistry , electrical engineering , metallurgy , engineering , dielectric
We report the photovoltaic properties of doped ferroelectric [Bi0.9La0.1][Fe0.97Ti0.02Zr0.01]O3 (BLFTZO) thin films. Polycrystalline BLFTZO films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. Al-doped ZnO transparent top electrodes complete the ZnO:Al/BLFTZO/Pt metal-ferroelectric-metal capacitor structures. BLFTZO showed switchable photoresponse in both polarities. The open circuit voltage (VOC) and short circuit current (JSC) were found to be ∼0.022 V and ∼650 μA/cm2, respectively after positive poling, whereas significant difference in VOC ∼ 0.018V and JSC ∼ 700 μA/cm2 was observed after negative poling. The observed switchable photocurrent and photovoltage responses are explained on the basis of polarization flipping in BLFTZO due to the applied poling field.

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