Critical boron-doping levels for generation of dislocations in synthetic diamond | Zendy

M. P. Alegre | Zendy; D. Araújo | Zendy; Alexandre Fiori | Zendy; José Carlos Piñero Charlo | Zendy; Fernando Lloret | Zendy; M.P. Villar | Zendy; P. Achatz | Zendy; Gauthier Chicot | Zendy; E. Bustarret | Zendy; François Jomard | Zendy

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Critical boron-doping levels for generation of dislocations in synthetic diamond

Author(s) -

M. P. Alegre,

D. Araújo,

Alexandre Fiori,

José Carlos Piñero Charlo,

Fernando Lloret,

M.P. Villar,

P. Achatz,

Gauthier Chicot,

E. Bustarret,

François Jomard

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4900741

Subject(s) - diamond , boron , doping , materials science , transmission electron microscopy , condensed matter physics , strain (injury) , crystallography , chemical physics , nanotechnology , optoelectronics , composite material , chemistry , physics , medicine , organic chemistry

Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 1020at/cm3 range in the ⟨111⟩ direction and at 3.2 × 1021 at/cm3 for the ⟨001⟩ one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

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