Open AccessNanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template
Author(s) -
S. Sundaram,
Renaud Puybaret,
Youssef El Gmili,
X. Li,
P. L. Bonanno,
Konstantinos Pantzas,
G. Orsal,
David Tománek,
Zhonghou Cai,
G. Patriarche,
Paul L. Voss,
Jean Paul Salvestrini,
A. Ougazzaden
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4900531
Subject(s) - materials science , indium gallium nitride , nanorod , nanostructure , indium , optoelectronics , gallium nitride , sapphire , chemical vapor deposition , metalorganic vapour phase epitaxy , wurtzite crystal structure , nanotechnology , transmission electron microscopy , indium nitride , nanoscopic scale , epitaxy , zinc , optics , laser , layer (electronics) , physics , metallurgy
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