Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template
Author(s) -
Suresh Sundaram,
Renaud Puybaret,
Y. El Gmili,
Xin Li,
P. L. Bonanno,
Konstantinos Pantzas,
G. Orsal,
D. Troadec,
Zhonghou Cai,
G. Patriarche,
Paul L. Voss,
JeanPaul Salvestrini,
A. Ougazzaden
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4900531
Subject(s) - materials science , indium gallium nitride , nanorod , nanostructure , indium , optoelectronics , gallium nitride , sapphire , chemical vapor deposition , metalorganic vapour phase epitaxy , wurtzite crystal structure , nanotechnology , transmission electron microscopy , indium nitride , nanoscopic scale , epitaxy , zinc , optics , laser , layer (electronics) , physics , metallurgy
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