Stable and metastable Si negative-U centers in AlGaN and AlN | Zendy

Xuan Thang Trinh | Zendy; Daniel Nilsson | Zendy; Ivan G. Ivanov | Zendy; Erik Janzén | Zendy; A. KakanakovaGeorgieva | Zendy; Nguyên Tiên Són | Zendy

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Stable and metastable Si negative-U centers in AlGaN and AlN

Author(s) -

Xuan Thang Trinh,

Daniel Nilsson,

Ivan G. Ivanov,

Erik Janzén,

A. KakanakovaGeorgieva,

Nguyên Tiên Són

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4900409

Subject(s) - metastability , electron paramagnetic resonance , materials science , center (category theory) , doping , atomic physics , charge (physics) , wide bandgap semiconductor , crystallography , condensed matter physics , chemistry , nuclear magnetic resonance , physics , optoelectronics , organic chemistry , quantum mechanics

Electron paramagnetic resonance studies of Si-doped AlxGa1−xN (0.79 ≤ x ≤ 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x ≥ 0.84. We found that for the stable DX center, the energy |EDX| of the negatively charged state DX−, which is also considered as the donor activation energy, abruptly increases with Al content for x ∼ 0.83–1.0 approaching ∼240 meV in AlN, whereas EDX remains to be close to the neutral charge state Ed for the metastable DX center (∼11 meV below Ed in AlN)

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