Open AccessResistive switching in polycrystalline YMnO3 thin films
Author(s) -
Agnieszka Bogusz,
Alexander Müller,
Daniel Blaschke,
Ilona Skorupa,
Danilo Bürger,
A. Scholz,
Oliver G. Schmidt,
Heidemarie Schmidt
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4899188
Subject(s) - materials science , crystallite , ferroelectricity , multiferroics , resistive touchscreen , pulsed laser deposition , thin film , fabrication , electrical conductor , electrode , optoelectronics , electric field , grain boundary , deposition (geology) , nanotechnology , composite material , electrical engineering , chemistry , dielectric , microstructure , alternative medicine , pathology , engineering , quantum mechanics , metallurgy , medicine , physics , biology , paleontology , sediment
We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices
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