Open AccessCatalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy
Author(s) -
S. E. Harrison,
Piet Schönherr,
Yijie Huo,
J. S. Harris,
T. Hesjedal
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4898816
Subject(s) - nanostructure , molecular beam epitaxy , materials science , sapphire , substrate (aquarium) , nanotechnology , thin film , epitaxy , catalysis , nanolithography , optoelectronics , topological insulator , chemical engineering , condensed matter physics , chemistry , optics , fabrication , organic chemistry , layer (electronics) , physics , medicine , alternative medicine , pathology , engineering , laser , oceanography , geology
We present the catalyst-free growth of binary Bi2Te3 topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from ∼180°C to 260°C. The growth rate and shape of the nanostructures are highly temperature-dependent. The microscopic study of the nanostructures and their relationship to the underlying Bi2Te3 thin film gives an insight into the growth mechanism
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