Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on | Zendy

M. H. Lee | Zendy; Y.-T. Wei | Zendy; Jhe-Cyun Lin | Zendy; C.-W. Chen | Zendy; WenHua Tu | Zendy; Ming Tang | Zendy

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Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

Author(s) -

M. H. Lee,

Y.-T. Wei,

Jhe-Cyun Lin,

C.-W. Chen,

WenHua Tu,

Ming Tang

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4898150

Subject(s) - ferroelectricity , materials science , transistor , negative impedance converter , field effect transistor , optoelectronics , capacitance , subthreshold slope , subthreshold conduction , polarization (electrochemistry) , voltage , drain induced barrier lowering , electrical engineering , electrode , physics , chemistry , voltage source , engineering , dielectric , quantum mechanics

Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼−1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (−0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices

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