Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system | Zendy

Takayuki Kiba | Zendy; Toru Tanaka | Zendy; Yosuke Tamura | Zendy; Akio Higo | Zendy; Cédric Thomas | Zendy; Seiji Samukawa | Zendy; Akihiro Murayama | Zendy

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Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

Author(s) -

Takayuki Kiba,

Toru Tanaka,

Yosuke Tamura,

Akio Higo,

Cédric Thomas,

Seiji Samukawa,

Akihiro Murayama

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4897958

Subject(s) - exciton , quantum dot , relaxation (psychology) , condensed matter physics , spin (aerodynamics) , quantum well , biexciton , materials science , etching (microfabrication) , physics , optoelectronics , nanotechnology , optics , psychology , social psychology , laser , thermodynamics , layer (electronics)

We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License

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