Open AccessMo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS2
Author(s) -
Xiaoxu Wei,
Zhihao Yu,
Fengrui Hu,
Ying Cheng,
Linwei Yu,
Xiaoyong Wang,
Min Xiao,
Junzhuan Wang,
Xinran Wang,
Yi Shi
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4897522
Subject(s) - photoluminescence , monolayer , materials science , doping , annealing (glass) , electron , exciton , luminescence , spontaneous emission , optoelectronics , binding energy , carrier lifetime , molecular physics , atomic physics , condensed matter physics , nanotechnology , silicon , chemistry , optics , physics , laser , quantum mechanics , composite material
In this work, we report a strong photoluminescence (PL) enhancement of monolayer MoS2 under different treatments. We find that by simple ambient annealing treatment in the range of 200 °C to 400 °C, the PL emission can be greatly enhanced by a factor up to two orders of magnitude. This enhancement can be attributed to two factors: first, the formation of Mo-O bonds during ambient exposure introduces an effective p-doping in the MoS2 layer; second, localized electrons formed around Mo-O bonds related defective sites where the electrons can be effectively localized with higher binding energy resulting in efficient radiative excitons recombination. Time resolved PL decay measurement showed that longer lifetime of the treated sample consistent with the higher quantum efficiency in PL. These results give more insights to understand the luminescence properties of the MoS2
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