Temperature-dependent gate-swing hysteresis of pentacene thin film transistors | Zendy

Yow-Jon Lin | Zendy; YuCheng Lin | Zendy

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Temperature-dependent gate-swing hysteresis of pentacene thin film transistors

Author(s) -

Yow-Jon Lin,

YuCheng Lin

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4897339

Subject(s) - hysteresis , pentacene , thin film transistor , materials science , thermal conduction , swing , transistor , condensed matter physics , gate voltage , optoelectronics , organic semiconductor , voltage , nanotechnology , electrical engineering , composite material , layer (electronics) , physics , engineering , acoustics

The temperature-dependent hysteresis-type transfer characteristics of pentacene-based organic thin film transistors (OTFTs) were researched. The temperature-dependent transfer characteristics exhibit hopping conduction behavior. The fitting data for the temperature-dependent off-to-on and on-to-off transfer characteristics of OTFTs demonstrate that the hopping distance (ah) and the barrier height for hopping (qϕt) control the carrier flow, resulting in the hysteresis-type transfer characteristics of OTFTs. The hopping model gives an explanation of the gate-swing hysteresis and the roles played by qϕt and ah

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