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A new method has recently been proposed by us for accurate measurement of the solar cell temperature in any operational regime, in particular, at a maximum power point (MPP) of the I-V curve (T-p-n(MPP)). For this, fast switching of a cell from MPP to open circuit (OC) regime is carried out and open circuit voltage V-oc is measured immediately (within about 1 millisecond), so that this value becomes to be an indicator of T-p-n(MPP). In the present work, we have considered a practical case, when a solar cell is heated not only by absorption of light incident upon its surface (called "photoactive" absorption of power), but also by heat transferred from structural elements surrounding the cell and heated by absorption of direct or diffused sunlight ("non-photoactive" absorption of power with respect to a solar cell). This process takes place in any concentrator module with non-ideal concentrators. Low overheating temperature of the p-n junction (or p-n junctions in a multijunction cell) is a cumulative parameter characterizing the quality of a solar module by the factor of heat removal effectiveness and, at the same time, by the factor of low "non-photoactive" losses

Temperature of solar cells with regard to photoactive and non-photoactive light absorption in concentrator PV modules