High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs | Zendy

M. Z. Shvarts | Zendy; А.С. Гудовских | Zendy; N. А. Kalyuzhnyy | Zendy; S. А. Mintairov | Zendy; Andrei A. Soluyanov | Zendy; N. Kh. Timoshina | Zendy; A. Ĺuque | Zendy

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High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

Author(s) -

M. Z. Shvarts,

А.С. Гудовских,

N. А. Kalyuzhnyy,

S. А. Mintairov,

Andrei A. Soluyanov,

N. Kh. Timoshina,

A. Ĺuque

Publication year - 2014

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.4897021

Subject(s) - heterojunction , optoelectronics , concentrator , materials science , space charge , radiation , solar cell , gallium arsenide , intensity (physics) , charge carrier , sunlight , optics , physics , quantum mechanics , electron

In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to -190 degrees C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V-oc starting from -20 degrees C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-p Ge heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique

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