Open AccessErratum: “The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots” [AIP Advances 4, 067113 (2014)]
Author(s) -
Mohammadreza Shahzadeh,
Mohammad Sabaeian
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4896510
Subject(s) - wetting layer , dome (geology) , quantum dot , condensed matter physics , wetting , materials science , layer (electronics) , gallium arsenide , optoelectronics , physics , nanotechnology , geology , composite material , paleontology
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