Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots | Zendy

Tristan Braun | Zendy; Christian Schneider | Zendy; Stefan A. Maier | Zendy; R. Igusa | Zendy; Satoshi Iwamoto | Zendy; A. Forchel | Zendy; Sven Höfling | Zendy; Yasuhiko Arakawa | Zendy; M. Kamp | Zendy

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Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

Author(s) -

Tristan Braun,

Christian Schneider,

Stefan A. Maier,

R. Igusa,

Satoshi Iwamoto,

A. Forchel,

Sven Höfling,

Yasuhiko Arakawa,

M. Kamp

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4896284

Subject(s) - laser linewidth , quantum dot , photoluminescence , materials science , exciton , optoelectronics , electron beam lithography , gallium arsenide , quenching (fluorescence) , etching (microfabrication) , quantum well , phonon , wide bandgap semiconductor , excitation , condensed matter physics , resist , nanotechnology , laser , optics , physics , fluorescence , layer (electronics) , quantum mechanics

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

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