The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem | Zendy

Fabien Massabuau | Zendy; Matthew Davies | Zendy; Fabrice Oehler | Zendy; S. K. Pamenter | Zendy; E. J. Thrush | Zendy; Menno J. Kappers | Zendy; András Kovács | Zendy; Tim Williams | Zendy; M. A. Hopkins | Zendy; C. J. Humphreys | Zendy; P. Dawson | Zendy; Rafal E. DuninBorkowski | Zendy; Joanne Etheridge | Zendy; D.W.E. Allsopp | Zendy; Rachel A. Oliver | Zendy

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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Author(s) -

Fabien Massabuau,

Matthew Davies,

Fabrice Oehler,

S. K. Pamenter,

E. J. Thrush,

Menno J. Kappers,

András Kovács,

Tim Williams,

M. A. Hopkins,

C. J. Humphreys,

P. Dawson,

Rafal E. DuninBorkowski,

Joanne Etheridge,

D.W.E. Allsopp,

Rachel A. Oliver

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4896279

Subject(s) - materials science , light emitting diode , optoelectronics , electroluminescence , trench , wide bandgap semiconductor , diode , stack (abstract data type) , spontaneous emission , photoluminescence , quantum efficiency , stacking , layer (electronics) , optics , nanotechnology , chemistry , physics , organic chemistry , computer science , laser , programming language

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