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Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering
Author(s) -
Jun Ge,
Denis Rémiens,
Xianlin Dong,
Ying Chen,
J. Costecalde,
Feng Gao,
Fei Cao,
Genshui Wang
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4896156
Subject(s) - antiferroelectricity , ferroelectricity , materials science , phase transition , epitaxy , polarization (electrochemistry) , condensed matter physics , electric field , substrate (aquarium) , strain engineering , phase (matter) , optoelectronics , dielectric , nanotechnology , silicon , chemistry , physics , layer (electronics) , oceanography , organic chemistry , quantum mechanics , geology

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