Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2 | Zendy

Rajesh Kappera | Zendy; Damien Voiry | Zendy; Sibel Ebru Yalcin | Zendy; Wesley Jen | Zendy; Muharrem Acerce | Zendy; S. Torrel | Zendy; Brittany Branch | Zendy; Sidong Lei | Zendy; Weibing Chen | Zendy; Sijmaei | Zendy; Jun Lou | Zendy; Pulickel M. Ajayan | Zendy; Gautam Gupta | Zendy; Aditya D. Mohite | Zendy; Manish Chhowalla | Zendy

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Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

Author(s) -

Rajesh Kappera,

Damien Voiry,

Sibel Ebru Yalcin,

Wesley Jen,

Muharrem Acerce,

S. Torrel,

Brittany Branch,

Sidong Lei,

Weibing Chen,

Sijmaei,

Jun Lou,

Pulickel M. Ajayan,

Gautam Gupta,

Aditya D. Mohite,

Manish Chhowalla

Publication year - 2014

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4896077

Subject(s) - materials science , contact resistance , electrode , doping , field effect transistor , optoelectronics , phase (matter) , transistor , semiconductor , metal , electrical contacts , band gap , chemical vapor deposition , nanotechnology , metallurgy , electrical engineering , voltage , chemistry , engineering , layer (electronics) , organic chemistry

Two dimensional transitionmetal dichalcogenides (2D TMDs) offer promise as optoelectronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes

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