Open AccessHydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films
Author(s) -
Monica MoralesMasis,
Laura Ding,
Fabien Dauzou,
Quentin Jeangros,
Aïcha HesslerWyser,
Sylvain Nicolay,
Christophe Ballif
Publication year - 2014
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4896051
Subject(s) - materials science , amorphous solid , tin , indium tin oxide , conductivity , doping , zinc , transparent conducting film , electrical resistivity and conductivity , substrate (aquarium) , thin film , plasma , hydrogen , indium , absorptance , chemical engineering , optoelectronics , metallurgy , nanotechnology , optics , chemistry , oceanography , organic chemistry , geology , reflectivity , physics , engineering , quantum mechanics , electrical engineering
Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2)-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates
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