Effect of antimony on the deep-level traps in GaInNAsSb thin films | Zendy

Muhammad Monirul Islam | Zendy; Naoya Miyashita | Zendy; Nazmul Ahsan | Zendy; T. Sakurai | Zendy; Katsuhiro Akimoto | Zendy; Yoshitaka Okada | Zendy

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Effect of antimony on the deep-level traps in GaInNAsSb thin films

Author(s) -

Muhammad Monirul Islam,

Naoya Miyashita,

Nazmul Ahsan,

T. Sakurai,

Katsuhiro Akimoto,

Yoshitaka Okada

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4895940

Subject(s) - antimony , materials science , optoelectronics , conduction band , deep level transient spectroscopy , band gap , admittance , gallium arsenide , layer (electronics) , wide bandgap semiconductor , electron , silicon , nanotechnology , metallurgy , electrical engineering , electrical impedance , physics , quantum mechanics , engineering

Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E C), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects

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