Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys | Zendy

Jan Kopaczek | Zendy; Mohana K. Rajpalke | Zendy; W. M. Linhart | Zendy; T.S. Jones | Zendy; M. J. Ashwin | Zendy; R. Kudrawiec | Zendy; T. D. Veal | Zendy

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Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys

Author(s) -

Jan Kopaczek,

Mohana K. Rajpalke,

W. M. Linhart,

T.S. Jones,

M. J. Ashwin,

R. Kudrawiec,

T. D. Veal

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4895930

Subject(s) - band gap , molecular beam epitaxy , materials science , spectroscopy , alloy , diffraction , wide bandgap semiconductor , x ray crystallography , analytical chemistry (journal) , epitaxy , optoelectronics , optics , chemistry , metallurgy , nanotechnology , physics , quantum mechanics , layer (electronics) , chromatography

Molecular beam epitaxy is used to grow Ga1− y In y Sb1− x Bi x (y ≤ 5.5% and x ≤ 2.5%) and Al y Ga1− y Sb1− x Bi x alloys (y ≤ 6.6% and x ≤ 2.0%). The alloy composition and film thickness are determined by high resolution x-ray diffraction. The band gap of the alloys is determined by photomodulated reflectance (PR) spectroscopy. The band gap energy reduces with increasing In and Bi contents and decreasing Al content. The band gap energy reduction between 15 and 290 K is in the range of 60–75 meV, somewhat lower than the 82 meV for GaSb. The broadening of the band gap-related PR feature is between 16 and 28 meV.

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