Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction | Zendy

Tao Bai | Zendy; D. L. Li | Zendy; Zhiyang Yuan | Zendy; H. F. Liu | Zendy; S.S. Ali | Zendy; Jing Feng | Zendy; H. X. Wei | Zendy; Xingguo Han | Zendy; Y. Liu | Zendy; Yonggang Zhao | Zendy; Qiang Zhang | Zendy; Z.B. Guo | Zendy; X. X. Zhang | Zendy

Open Access

Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

Author(s) -

Tao Bai,

D. L. Li,

Zhiyang Yuan,

H. F. Liu,

S.S. Ali,

Jing Feng,

H. X. Wei,

Xingguo Han,

Y. Liu,

Yonggang Zhao,

Qiang Zhang,

Z.B. Guo,

X. X. Zhang

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4895671

Subject(s) - materials science , annealing (glass) , condensed matter physics , perpendicular , magnetoresistance , magnetic anisotropy , quantum tunnelling , anisotropy , conversion electron mössbauer spectroscopy , tunnel magnetoresistance , tantalum , layer (electronics) , mössbauer spectroscopy , magnetization , mössbauer effect , magnetic field , optoelectronics , crystallography , nanotechnology , composite material , optics , metallurgy , chemistry , physics , mathematics , geometry , quantum mechanics

Magnetic properties of Co40Fe40B20(CoFeB) thin films sandwiched between Ta and MgAl2O4layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki=1.22erg/cm2, which further increases to 1.30erg/cm2after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0nm, while that for top CoFeB layer is between 0.8 and 1.4nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy

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