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Single- and few-layered transition metal dichalcogenides, such as MoS2 and WS2, are emerging two-dimensional materials exhibiting numerous and unusual physico-chemical properties that could be advantageous in the fabrication of unprecedented optoelectronic devices. Here we report a novel and alternative route to synthesize triangular monocrystals of MoS2 and MoxW1-xS2 by annealing MoS2 and MoS2/WO3 precursors, respectively, in the presence of sulfur vapor. In particular, the MoxW1-xS2 triangular monolayers show gradual concentration profiles of W and Mo whereby Mo concentrates in the islands’ center and W is more abundant on the outskirts of the triangular monocrystals. These observations were confirmed by atomic force microscopy, and high-resolution transmission electron microscopy, as well as Raman and photoluminescence spectroscopy. The presence of tunable PL signals depending on the MoxW1-xS2 stoichiometries in 2D monocrystals opens up a wide range of applications in electronics and optoelectronics

Facile synthesis of MoS2 and MoxW1-xS2 triangular monolayers