Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy | Zendy

Tran Thien Duc | Zendy; Г. Позина | Zendy; Nguyên Tiên Són | Zendy; Erik Janzén | Zendy; Takeshi Ohshima | Zendy; C. Hemmingsson | Zendy

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Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Author(s) -

Tran Thien Duc,

Г. Позина,

Nguyên Tiên Són,

Erik Janzén,

Takeshi Ohshima,

C. Hemmingsson

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4895390

Subject(s) - annealing (glass) , epitaxy , irradiation , halide , deep level transient spectroscopy , materials science , analytical chemistry (journal) , penning trap , vacancy defect , electron beam processing , fluence , crystallographic defect , electron , chemistry , optoelectronics , crystallography , silicon , inorganic chemistry , nanotechnology , physics , layer (electronics) , chromatography , quantum mechanics , nuclear physics , composite material

Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E-C-0.24 eV), D3 (E-C-0.60 eV), D4 (E-C-0.69 eV), D5 (E-C-0.96 eV), D7 (E-C-1.19 eV), and D8, were observed. After 2MeV electron irradiation at a fluence of 1 x 10(14) cm(-2), three deep electron traps, labeled D1 (E-C-0.12 eV), D5I (E-C-0.89 eV), and D6 (E-C-1.14 eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

Funding Agencies|Swedish Research Council (VR); Swedish Energy Agency

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