Spin filtering in a δ-doped magnetic-electric-barrier nanostructure | Zendy

Shuai Li | Zendy; MaoWang Lu | Zendy; Yaqing Jiang | Zendy; SaiYan Chen | Zendy

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Spin filtering in a δ-doped magnetic-electric-barrier nanostructure

Author(s) -

Shuai Li,

MaoWang Lu,

Yaqing Jiang,

SaiYan Chen

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4895386

Subject(s) - spintronics , doping , condensed matter physics , spin polarization , heterojunction , nanostructure , materials science , ferromagnetism , magnetic semiconductor , spin (aerodynamics) , spin hall effect , spin pumping , spinplasmonics , optoelectronics , electron , nanotechnology , physics , thermodynamics , quantum mechanics

We report a theoretical study on spin-polarized transport in a δ-doped magnetic-electric-barrier nanostructure, which can be realized in experiments by depositing two ferromagnetic stripes on top and bottom of a semiconductor heterostructure under an applied voltage and by using atomic layer doping technique. The spin-polarized behavior of the electron in this device is found to be quite sensitive to the δ-doping. One can conveniently tune the degree of the electron spin polarization by adjusting the weight and/or position of the δ-doping. Thus, the involved nansosystem can be employed as a controllable spin filter, which may be helpful for exploiting new spin-polarized source for spintronics applications

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