The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)
Author(s) -
Zhi Long Liu,
Meixiao Wang,
Canhua Liu,
Jinfeng Jia,
Patrick Vogt,
C. Quaresima,
C. Ottaviani,
Bruno Olivieri,
Paola De Padova,
G. Le Lay
Publication year - 2014
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4894871
Subject(s) - silicene , materials science , scanning tunneling microscope , silicon , x ray photoelectron spectroscopy , phase (matter) , crystallography , chemical physics , nanotechnology , condensed matter physics , optoelectronics , chemistry , physics , nuclear magnetic resonance , organic chemistry
Silicon atoms deposited on Ag(111) produce various single layer silicene sheets with different buckling patterns and periodicities. Low temperature scanning tunneling microscopy reveals that one of the silicene sheets, the hypothetical √7 × √7 silicene structure, on 2√3 × 2√3 Ag(111), is inherently highly defective and displays no long-range order. Moreover, Auger and photoelectron spectroscopy measurements reveal its sudden death, to end, in a dynamic fating process at ∼300 °C. This result clarifies the real nature of the 2√3 × 2√3R(30°) silicene phase and thus helps to understand the diversity of the silicene sheets grown on Ag(111)
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