Heterostructures based on inorganic and organic van der Waals systems | Zendy

GwanHyoung Lee | Zendy; ChulHo Lee | Zendy; Arend M. van der Zande | Zendy; Minyong Han | Zendy; Xu Cui | Zendy; Ghidewon Arefe | Zendy; Colin Nuckolls | Zendy; Tony F. Heinz | Zendy; James Hone | Zendy; Philip Kim | Zendy

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Heterostructures based on inorganic and organic van der Waals systems

Author(s) -

GwanHyoung Lee,

ChulHo Lee,

Arend M. van der Zande,

Minyong Han,

Xu Cui,

Ghidewon Arefe,

Colin Nuckolls,

Tony F. Heinz,

James Hone,

Philip Kim

Publication year - 2014

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4894435

Subject(s) - heterojunction , graphene , materials science , van der waals force , chemical vapor deposition , nanotechnology , substrate (aquarium) , optoelectronics , molecule , chemistry , oceanography , geology , organic chemistry

The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors

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