Open AccessInAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells
Author(s) -
R. Jakomin,
Rudy M. S. Kawabata,
R. T. Mourão,
Daniel Neves Micha,
M. P. Pires,
Hongen Xie,
Alec M. Fischer,
F. A. Ponce,
P. L. Souza
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4894295
Subject(s) - quantum dot , indium , epitaxy , optoelectronics , materials science , vapor phase , metalorganic vapour phase epitaxy , aluminium , gallium arsenide , cadmium telluride photovoltaics , chemistry , nanotechnology , physics , layer (electronics) , metallurgy , thermodynamics
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