Open AccessImpact of Maxwell rigidity transitions on resistance drift phenomena in GexTe1−x glasses
Author(s) -
Jennifer Luckas,
Andreas E. Olk,
Peter Jost,
H. Volker,
José Alvarez,
Alexandre Jaffré,
Peter Zalden,
A. Piarristeguy,
A. Pradel,
C. Longeaud,
Matthias Wuttig
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4893743
Subject(s) - amorphous solid , rigidity (electromagnetism) , electrical resistivity and conductivity , condensed matter physics , relaxation (psychology) , raman spectroscopy , materials science , glass transition , stiffness , chemistry , physics , crystallography , composite material , optics , polymer , quantum mechanics , psychology , social psychology
International audienceAmorphous chalcogenides usually exhibit a resistivity, which increases with age following a power law q ~ t^a. Existing theories link this change in amorphous state resistivity to structural relaxation. Here, the impact of fundamental glass properties on resistance drift phenomena in amorphous GexTe1- x networks is studied. Employing Raman spectroscopy, the Maxwell rigidity transition from flexible to stressed rigid is determined to occur in the compositional range 0.2500.265) exhibit rather strong resistance drift, where the drift parameters increase steadily from a=0.13 for amorphous GeTe to a=0.29 for compositions near the stiffness threshold xc. On the other hand, the drift parameter in flexible glasses (x<0.25) decreases with decreasing Ge content x to values as low as a=0.05. These findings illustrate the strong impact of the stiffness threshold on resistance drift phenomena in chalcogenides
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