Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping | Zendy

Rongqing Hui | Zendy; Ruijie Xie | Zendy; I-Wen Feng | Zendy; Zhenyu Sun | Zendy; J. Y. Lin | Zendy; H. X. Jiang | Zendy

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Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

Author(s) -

Rongqing Hui,

Ruijie Xie,

I-Wen Feng,

Zhenyu Sun,

J. Y. Lin,

H. X. Jiang

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4892427

Subject(s) - erbium , materials science , cross section (physics) , wavelength , excitation , doping , optoelectronics , quality (philosophy) , optical pumping , waveguide , optics , excitation wavelength , laser , physics , quantum mechanics

Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10−21cm2 at 980 nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of epilayers. However, spontaneous emission carrier lifetimes in these waveguides are directly related to both the crystalline quality and the optical loss, and thus can be used as a material quality indicator.

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