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Effect of thermal annealing on ferroelectric domain structures in poly(vinylidene-fluoride-trifluorethylene) Langmuir-Blodgett thin films
Author(s) -
Zhiyong Xiao,
Jennifer Hamblin,
Shashi Poddar,
Stephen Ducharme,
Patrycja Paruch,
Xia Hong
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4891396
Subject(s) - ferroelectricity , materials science , annealing (glass) , curie temperature , nucleation , crystallite , monolayer , condensed matter physics , polarization (electrochemistry) , thin film , pyroelectricity , composite material , nanotechnology , optoelectronics , ferromagnetism , chemistry , dielectric , physics , organic chemistry , metallurgy
We report a piezo-response force microscopy study of the effect of thermal annealing on ferroelectric domain structures in 6 to 20 monolayer (11 to 36 nm) polycrystalline poly(vinylidene-fluoride-trifluorethylene) thin films prepared using the Langmuir-Blodgett approach. Stripe-shape domains have been created at room temperature and subjected to thermal annealing at progressively higher temperatures up to the ferroelectric Curie temperature TC of approximately 110 °C. The static configuration of the domain walls exhibits no appreciable temperature dependence after thermal annealing, with the domain-wall roughness exponent ζ ranging from 0.4 to 0.5. Above 80 °C, we observed spontaneous polarization reversal at randomly scattered local sites in both polarization states. The number of domain nucleation centers increases rapidly as a function of temperature. We compared the thermally driven domain formation in ferroelectric polymers with those observed in ferroelectric oxides and attributed the difference to ...

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