Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations | Zendy

Katsuhisa Yoshida | Zendy; Toru Shibamiya | Zendy; Nobuyuki Sano | Zendy

Open Access

Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations

Author(s) -

Katsuhisa Yoshida,

Toru Shibamiya,

Nobuyuki Sano

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4890695

Subject(s) - coulomb , monte carlo method , coulomb blockade , transistor , physics , plasmon , condensed matter physics , computational physics , statistical physics , optoelectronics , electron , voltage , quantum mechanics , statistics , mathematics

We study the dynamical Coulomb interaction under the junctionless transistor (JLT) structures, in which high doping concentration is inevitable to obtain good device performance, by employing the self-consistent Monte Carlo simulations. The power spectra of potential fluctuations in the source and drain regions show clear peaks corresponding to the plasma frequencies in those regions. This observation justifies the accuracy of the present simulations. The dynamical Coulomb interaction degrades the drain current and, thus, is inevitable to predict accurate device performance of JLTs

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