Tunable electronic properties of silicon nanowires under strain and electric bias | Zendy

Alexis Nduwimana | Zendy; Xiaoqian Wang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Tunable electronic properties of silicon nanowires under strain and electric bias

Author(s) -

Alexis Nduwimana,

Xiaoqian Wang

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4890674

Subject(s) - materials science , nanowire , silicon , optoelectronics , density functional theory , condensed matter physics , strain (injury) , biasing , strain engineering , electric field , electrical engineering , voltage , chemistry , physics , computational chemistry , medicine , engineering , quantum mechanics

The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research