Picosecond dynamics of a silicon donor based terahertz detector device | Zendy

E. T. Bowyer | Zendy; B. J. Villis | Zendy; Juerong Li | Zendy; K. L. Litvinenko | Zendy; B. N. Murdin | Zendy; Morteza Erfani | Zendy; Guy Matmon | Zendy; G. Aeppli | Zendy; Jean-Michel Ortéga | Zendy; R. Prazérès | Zendy; Dong Li | Zendy; Xiaomei Yu | Zendy

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Picosecond dynamics of a silicon donor based terahertz detector device

Author(s) -

E. T. Bowyer,

B. J. Villis,

Juerong Li,

K. L. Litvinenko,

B. N. Murdin,

Morteza Erfani,

Guy Matmon,

G. Aeppli,

Jean-Michel Ortéga,

R. Prazérès,

Dong Li,

Xiaomei Yu

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4890526

Subject(s) - terahertz radiation , picosecond , nanosecond , optoelectronics , noise equivalent power , detector , silicon , materials science , semiconductor , semiconductor device , optics , laser , photodetector , physics , nanotechnology , responsivity , layer (electronics)

We report the characteristics of a simple complementary metal-oxide-semiconductor compatible terahertz detector device with low response time (nanoseconds) determined using a short-pulse, high intensity free-electron laser. The noise equivalent power was 1 × 10−11 W Hz−1/2. The detector has an enhanced response over narrow bands, most notably at 9.5 THz, with a continuum response at higher frequencies. Using such a device, the dynamics of donors in silicon can be explored, a system which has great potential for quantum information processing.

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