Open AccessBias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
Author(s) -
Manolis Wallace,
P. R. Edwards,
Menno J. Kappers,
M. A. Hopkins,
Fabrice Oehler,
S. Sivaraya,
D.W.E. Allsopp,
Rachel A. Oliver,
C. J. Humphreys,
Robert Martin
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4890497
Subject(s) - cathodoluminescence , electron beam induced current , electroluminescence , materials science , light emitting diode , wide bandgap semiconductor , diode , optoelectronics , conductivity , diffusion , cathode ray , electron , optics , luminescence , chemistry , physics , nanotechnology , layer (electronics) , quantum mechanics , silicon , thermodynamics
Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2–10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30–40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (∼100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN
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