Recombination dynamics of a localized exciton bound at basal stacking faults within the m-plane ZnO film | Zendy

Song Yang | Zendy; HsuCheng Hsu | Zendy; W.-R. Liu | Zendy; BiHsuan Lin | Zendy; C. C. Kuo | Zendy; C-H. Hsu | Zendy; Martin Eriksson | Zendy; P. O. Holtz | Zendy; W. F. Hsieh | Zendy

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Recombination dynamics of a localized exciton bound at basal stacking faults within the m-plane ZnO film

Author(s) -

Song Yang,

HsuCheng Hsu,

W.-R. Liu,

BiHsuan Lin,

C. C. Kuo,

C-H. Hsu,

Martin Eriksson,

P. O. Holtz,

W. F. Hsieh

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4887280

Subject(s) - exciton , photoluminescence , quantum well , stacking , excited state , blueshift , band bending , molecular physics , materials science , condensed matter physics , epitaxy , chemistry , spectral line , atomic physics , optoelectronics , optics , nanotechnology , physics , laser , organic chemistry , layer (electronics) , astronomy

We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

Funding Agencies|National Science Council of Taiwan [NSC-99-2112-M-006-017-MY3, NSC-100-2112-M-213-002-MY3, NSC-102-2112-M-006-012-MY3]

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