Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization | Zendy

Oya N | Zendy; Kaoru Toko | Zendy; Noriyuki Saitoh | Zendy; Noriko Yoshizawa | Zendy; Takashi Suemasu | Zendy

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Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

Author(s) -

Oya N,

Kaoru Toko,

Noriyuki Saitoh,

Noriko Yoshizawa,

Takashi Suemasu

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4887236

Subject(s) - polyimide , materials science , crystallization , crystallite , amorphous solid , grain size , layer (electronics) , germanium , thin film , optoelectronics , crystal (programming language) , composite material , crystallography , nanotechnology , metallurgy , chemical engineering , silicon , chemistry , computer science , engineering , programming language

The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325 °C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200 μm in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility

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