Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon | Zendy

I. Roland | Zendy; Y. Zeng | Zendy; Zheng Han | Zendy; X. Checoury | Zendy; Candice Blin | Zendy; M. El Kurdi | Zendy; A. Ghrib | Zendy; S. Sauvage | Zendy; B. Gayral | Zendy; Christelle Brimont | Zendy; T. Guillet | Zendy; F. Sèmond | Zendy; P. Boucaud | Zendy

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Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Author(s) -

I. Roland,

Y. Zeng,

Zheng Han,

X. Checoury,

Candice Blin,

M. El Kurdi,

A. Ghrib,

S. Sauvage,

B. Gayral,

Christelle Brimont,

T. Guillet,

F. Sèmond,

P. Boucaud

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4887065

Subject(s) - materials science , gallium nitride , photonic crystal , silicon nitride , optoelectronics , radius , absorption (acoustics) , substrate (aquarium) , silicon , nitride , resonance (particle physics) , optics , nanotechnology , computer science , composite material , physics , layer (electronics) , oceanography , computer security , particle physics , geology

International audienceWe demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a 7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission

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