On effective surface recombination parameters | Zendy

Keith R. McIntosh | Zendy; Lachlan E. Black | Zendy

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On effective surface recombination parameters

Author(s) -

Keith R. McIntosh,

Lachlan E. Black

Publication year - 2014

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4886595

Subject(s) - wafer , passivation , silicon , materials science , figure of merit , nanosphere lithography , doping , analytical chemistry (journal) , optoelectronics , dopant , black silicon , nanotechnology , chemistry , fabrication , layer (electronics) , medicine , alternative medicine , pathology , chromatography

This paper examines two effective surface recombination parameters: the effective surface recombination velocity Seff and the surface saturation current density J0s. The dependence of Seff and J0s on surface charge Q, surface dopant concentration Ns, and interface parameters is derived. It is shown that for crystalline silicon at 300 K in low-injection, Seff is independent of Ns only when Q2/Ns 1.5 × 107 cm for accumulation and Q1.85/Ns > 1.5 × 106 cm for inversion. These conditions are commonly satisfied in undiffused wafers but rarely in diffused wafers. We conclude that for undiffused silicon, J0s is superior to the conventional Seff as a metric for quantifying the surface passivation, whereas for dif...

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