Open AccessLow defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices
Author(s) -
R. Cipro,
T. Baron,
M. Martin,
J. Moeyaert,
Sylvain David,
Viktoriia Gorbenko,
F. Bassani,
Y. Bogumilowicz,
JeanPaul Barnes,
N. Rochat,
V. Loup,
C. Vizioz,
N. Allouti,
Nicolas Chauvin,
Xinyu Bao,
Z. Ye,
Jean-Baptiste Pin,
E. Sánchez
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4886404
Subject(s) - cathodoluminescence , materials science , chemical vapor deposition , optoelectronics , wafer , metalorganic vapour phase epitaxy , quantum well , epitaxy , photoluminescence , luminescence , nanotechnology , optics , laser , layer (electronics) , physics
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