Yttria-stabilized zirconia/SrTiO3 oxide heteroepitaxial interface with symmetry discontinuity
Author(s) -
Mateusz Ścigaj,
N. Dix,
Mariona Cabero,
A. Rivera,
J. Santamarı́a,
J. Fontcuberta,
G. Herranz,
F. Sánchez
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4885089
Subject(s) - yttria stabilized zirconia , epitaxy , cubic zirconia , materials science , discontinuity (linguistics) , classification of discontinuities , oxide , condensed matter physics , layer (electronics) , substrate (aquarium) , crystallography , composite material , chemistry , metallurgy , geology , physics , ceramic , mathematical analysis , oceanography , mathematics
We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO_(3)(110) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with [110]YSZ(001)//[001]SrTiO_(3)(110) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO_(3)(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities
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