Epitaxy of polar semiconductor Co3O4 (110): Growth, structure, and characterization
Author(s) -
Kristy J. Kormondy,
Agham Posadas,
Alexander Slepko,
Ajit Dhamdhere,
David J. Smith,
Khadijih N. Mitchell,
Travis I. Willett-Gies,
Stefan Zollner,
Luke G. Marshall,
Jianshi Zhou,
Alexander A. Demkov
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4885048
Subject(s) - molecular beam epitaxy , ellipsometry , x ray photoelectron spectroscopy , materials science , heterojunction , band gap , semiconductor , thin film , direct and indirect band gaps , condensed matter physics , chemistry , analytical chemistry (journal) , epitaxy , optoelectronics , nuclear magnetic resonance , nanotechnology , layer (electronics) , chromatography , physics
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