Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices | Zendy

Fabrizio Gala | Zendy; Giuseppe Zollo | Zendy

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Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

Author(s) -

Fabrizio Gala,

Giuseppe Zollo

Publication year - 2014

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.4883036

Subject(s) - octadecyltrichlorosilane , materials science , dielectric , gate dielectric , organic field effect transistor , field effect transistor , optoelectronics , monolayer , substrate (aquarium) , mosfet , nanotechnology , semiconductor , transistor , characterization (materials science) , gate oxide , electrical engineering , oceanography , engineering , voltage , geology

Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates. © 2014 AIP Publishing LLC

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